The effect of germane variation on microstructure in polycrystalline Si/Si1-xGex thin films grown by rapid thermal chemical vapour deposition: Fractal characterisation using scanning probemicroscopy

P. A. Campbell, D. G. Walmsley, R. L. F. Chong, D. Gay, H. S. Gamble, D. W. McNeill

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

Scanning probe microscopy (SPM) techniques have been employed to image and characterise polycrystalline thin films of both pure silicon and Si/Si 1-xGex. The layers were grown on oxidised silicon substrates using a rapid thermal chemical vapour deposition (RTCVD) reactor. Microstructural characteristics (roughness and grain size) were measured and their dependence on germane content to the gas flow during deposition elucidated using a range of analysis techniques, including fractal methods. By tracking the evolution of cross-over points in the fractal spectrum, an estimate for the grain size range can be obtained, which tallies extremely well with actual topographical measurements.

Original languageEnglish
Pages (from-to)1067-1071
Number of pages5
JournalApplied Physics A: Materials Science and Processing
Volume66
Issue numberSuppl. 1
DOIs
Publication statusPublished - Mar 1998

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