Scanning probe microscopy (SPM) techniques have been employed to image and characterise polycrystalline thin films of both pure silicon and Si/Si 1-xGex. The layers were grown on oxidised silicon substrates using a rapid thermal chemical vapour deposition (RTCVD) reactor. Microstructural characteristics (roughness and grain size) were measured and their dependence on germane content to the gas flow during deposition elucidated using a range of analysis techniques, including fractal methods. By tracking the evolution of cross-over points in the fractal spectrum, an estimate for the grain size range can be obtained, which tallies extremely well with actual topographical measurements.
|Number of pages||5|
|Journal||Applied Physics A: Materials Science and Processing|
|Issue number||Suppl. 1|
|Publication status||Published - Mar 1998|