The effect of germane variation on microstructure in polycrystalline Si/Si1-xGex thin films grown by rapid thermal chemical vapour deposition: Fractal characterisation using scanning probemicroscopy

P. A. Campbell; D. G. Walmsley; R. L. F. Chong; D. Gay; H. S. Gamble; D. W. McNeill

doi:10.1007/PL00022817

The effect of germane variation on microstructure in polycrystalline Si/Si_1-xGe_x thin films grown by rapid thermal chemical vapour deposition: Fractal characterisation using scanning probemicroscopy

P. A. Campbell, D. G. Walmsley, R. L. F. Chong, D. Gay, H. S. Gamble, D. W. McNeill

Physics

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Scanning probe microscopy (SPM) techniques have been employed to image and characterise polycrystalline thin films of both pure silicon and Si/Si _1-xGe_x. The layers were grown on oxidised silicon substrates using a rapid thermal chemical vapour deposition (RTCVD) reactor. Microstructural characteristics (roughness and grain size) were measured and their dependence on germane content to the gas flow during deposition elucidated using a range of analysis techniques, including fractal methods. By tracking the evolution of cross-over points in the fractal spectrum, an estimate for the grain size range can be obtained, which tallies extremely well with actual topographical measurements.

Original language	English
Pages (from-to)	1067-1071
Number of pages	5
Journal	Applied Physics A: Materials Science and Processing
Volume	66
Issue number	Suppl. 1
DOIs	https://doi.org/10.1007/PL00022817
Publication status	Published - Mar 1998

ASJC Scopus subject areas

General Materials Science
General Chemistry

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10.1007/PL00022817

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Campbell, P. A., Walmsley, D. G., Chong, R. L. F., Gay, D., Gamble, H. S., & McNeill, D. W. (1998). The effect of germane variation on microstructure in polycrystalline Si/Si_1-xGe_x thin films grown by rapid thermal chemical vapour deposition: Fractal characterisation using scanning probemicroscopy. Applied Physics A: Materials Science and Processing, 66(Suppl. 1), 1067-1071. https://doi.org/10.1007/PL00022817

@article{b401dbc0e8e847c7b43651475a31ea40,

title = "The effect of germane variation on microstructure in polycrystalline Si/Si1-xGex thin films grown by rapid thermal chemical vapour deposition: Fractal characterisation using scanning probemicroscopy",

abstract = "Scanning probe microscopy (SPM) techniques have been employed to image and characterise polycrystalline thin films of both pure silicon and Si/Si 1-xGex. The layers were grown on oxidised silicon substrates using a rapid thermal chemical vapour deposition (RTCVD) reactor. Microstructural characteristics (roughness and grain size) were measured and their dependence on germane content to the gas flow during deposition elucidated using a range of analysis techniques, including fractal methods. By tracking the evolution of cross-over points in the fractal spectrum, an estimate for the grain size range can be obtained, which tallies extremely well with actual topographical measurements.",

author = "Campbell, \{P. A.\} and Walmsley, \{D. G.\} and Chong, \{R. L. F.\} and D. Gay and Gamble, \{H. S.\} and McNeill, \{D. W.\}",

year = "1998",

month = mar,

doi = "10.1007/PL00022817",

language = "English",

volume = "66",

pages = "1067--1071",

journal = "Applied Physics A: Materials Science and Processing",

issn = "0947-8396",

publisher = "Springer Heidelberg",

number = "Suppl. 1",

}

Campbell, PA, Walmsley, DG, Chong, RLF, Gay, D, Gamble, HS & McNeill, DW 1998, 'The effect of germane variation on microstructure in polycrystalline Si/Si_1-xGe_x thin films grown by rapid thermal chemical vapour deposition: Fractal characterisation using scanning probemicroscopy', Applied Physics A: Materials Science and Processing, vol. 66, no. Suppl. 1, pp. 1067-1071. https://doi.org/10.1007/PL00022817

The effect of germane variation on microstructure in polycrystalline Si/Si_1-xGe_x thin films grown by rapid thermal chemical vapour deposition: Fractal characterisation using scanning probemicroscopy. / Campbell, P. A.; Walmsley, D. G.; Chong, R. L. F. et al.
In: Applied Physics A: Materials Science and Processing, Vol. 66, No. Suppl. 1, 03.1998, p. 1067-1071.

Research output: Contribution to journal › Article › peer-review

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T1 - The effect of germane variation on microstructure in polycrystalline Si/Si1-xGex thin films grown by rapid thermal chemical vapour deposition

T2 - Fractal characterisation using scanning probemicroscopy

AU - Campbell, P. A.

AU - Walmsley, D. G.

AU - Chong, R. L. F.

AU - Gay, D.

AU - Gamble, H. S.

AU - McNeill, D. W.

PY - 1998/3

Y1 - 1998/3

N2 - Scanning probe microscopy (SPM) techniques have been employed to image and characterise polycrystalline thin films of both pure silicon and Si/Si 1-xGex. The layers were grown on oxidised silicon substrates using a rapid thermal chemical vapour deposition (RTCVD) reactor. Microstructural characteristics (roughness and grain size) were measured and their dependence on germane content to the gas flow during deposition elucidated using a range of analysis techniques, including fractal methods. By tracking the evolution of cross-over points in the fractal spectrum, an estimate for the grain size range can be obtained, which tallies extremely well with actual topographical measurements.

AB - Scanning probe microscopy (SPM) techniques have been employed to image and characterise polycrystalline thin films of both pure silicon and Si/Si 1-xGex. The layers were grown on oxidised silicon substrates using a rapid thermal chemical vapour deposition (RTCVD) reactor. Microstructural characteristics (roughness and grain size) were measured and their dependence on germane content to the gas flow during deposition elucidated using a range of analysis techniques, including fractal methods. By tracking the evolution of cross-over points in the fractal spectrum, an estimate for the grain size range can be obtained, which tallies extremely well with actual topographical measurements.

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DO - 10.1007/PL00022817

M3 - Article

AN - SCOPUS:45449112836

SN - 0947-8396

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EP - 1071

JO - Applied Physics A: Materials Science and Processing

JF - Applied Physics A: Materials Science and Processing

IS - Suppl. 1

ER -

Campbell PA, Walmsley DG, Chong RLF, Gay D, Gamble HS, McNeill DW. The effect of germane variation on microstructure in polycrystalline Si/Si_1-xGe_x thin films grown by rapid thermal chemical vapour deposition: Fractal characterisation using scanning probemicroscopy. Applied Physics A: Materials Science and Processing. 1998 Mar;66(Suppl. 1):1067-1071. doi: 10.1007/PL00022817

The effect of germane variation on microstructure in polycrystalline Si/Si_1-xGe_x thin films grown by rapid thermal chemical vapour deposition: Fractal characterisation using scanning probemicroscopy

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