Abstract
In this paper we describe the particular considerations relating to ultra-rapid, true-3D scanners based on charge-coupled device (CCD) or complementary metal-oxide semiconductor (CMOS) imaging detectors. Central to our ability to image dose distributions has been the development of novel materials whose optical properties change in response to radiation and a survey of these will be given. Finally, we will speculate briefly on the future of the technique.
Original language | English |
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Article number | 005 |
Pages (from-to) | 45-57 |
Number of pages | 13 |
Journal | Journal of Physics: Conference Series |
Volume | 56 |
Issue number | 1 |
DOIs | |
Publication status | Published - 1 Dec 2006 |
ASJC Scopus subject areas
- General Physics and Astronomy