Extensive new results have been obtained on memory switching in a-Si p+ni junctions. It is shown that the ON-state has its origins in a highly conducting filament less than lµm in diameter. The physical mechanisms that could play a role in the switching operations are discussed.
Lecomber, P. G., Owen, A. E., Spear, W. E., Hajto, J., Snell, A. J., Choi, W. K., Rose, M. J., & Reynolds, S. (1985). The switching mechanism in amorphous silicon junctions. Journal of Non-Crystalline Solids, 77-8(2), 1373-1382. https://doi.org/10.1016/0022-3093(85)90912-3