The switching mechanism in amorphous silicon junctions

P. G. Lecomber, A. E. Owen, W. E. Spear, J. Hajto, A. J. Snell, W. K. Choi, M. J. Rose, S. Reynolds

    Research output: Contribution to journalArticlepeer-review

    57 Citations (Scopus)


    Extensive new results have been obtained on memory switching in a-Si p+ni junctions. It is shown that the ON-state has its origins in a highly conducting filament less than lµm in diameter. The physical mechanisms that could play a role in the switching operations are discussed.
    Original languageEnglish
    Pages (from-to)1373-1382
    Number of pages10
    JournalJournal of Non-Crystalline Solids
    Issue number2
    Publication statusPublished - 1985


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