The switching mechanism in amorphous silicon junctions

P. G. Lecomber; A. E. Owen; W. E. Spear; J. Hajto; A. J. Snell; W. K. Choi; M. J. Rose; S. Reynolds

doi:10.1016/0022-3093(85)90912-3

The switching mechanism in amorphous silicon junctions

P. G. Lecomber, A. E. Owen, W. E. Spear, J. Hajto, A. J. Snell, W. K. Choi, M. J. Rose, S. Reynolds

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Abstract

Extensive new results have been obtained on memory switching in a-Si p+ni junctions. It is shown that the ON-state has its origins in a highly conducting filament less than lµm in diameter. The physical mechanisms that could play a role in the switching operations are discussed.

Original language	English
Pages (from-to)	1373-1382
Number of pages	10
Journal	Journal of Non-Crystalline Solids
Volume	77-8
Issue number	2
DOIs	https://doi.org/10.1016/0022-3093(85)90912-3
Publication status	Published - 1985

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@article{84795245bfa24e82a37bac4f7b04a435,

title = "The switching mechanism in amorphous silicon junctions",

abstract = "Extensive new results have been obtained on memory switching in a-Si p+ni junctions. It is shown that the ON-state has its origins in a highly conducting filament less than lµm in diameter. The physical mechanisms that could play a role in the switching operations are discussed.",

author = "Lecomber, {P. G.} and Owen, {A. E.} and Spear, {W. E.} and J. Hajto and Snell, {A. J.} and Choi, {W. K.} and Rose, {M. J.} and S. Reynolds",

year = "1985",

doi = "10.1016/0022-3093(85)90912-3",

language = "English",

volume = "77-8",

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T1 - The switching mechanism in amorphous silicon junctions

AU - Lecomber, P. G.

AU - Owen, A. E.

AU - Spear, W. E.

AU - Hajto, J.

AU - Snell, A. J.

AU - Choi, W. K.

AU - Rose, M. J.

AU - Reynolds, S.

PY - 1985

Y1 - 1985

N2 - Extensive new results have been obtained on memory switching in a-Si p+ni junctions. It is shown that the ON-state has its origins in a highly conducting filament less than lµm in diameter. The physical mechanisms that could play a role in the switching operations are discussed.

AB - Extensive new results have been obtained on memory switching in a-Si p+ni junctions. It is shown that the ON-state has its origins in a highly conducting filament less than lµm in diameter. The physical mechanisms that could play a role in the switching operations are discussed.

U2 - 10.1016/0022-3093(85)90912-3

DO - 10.1016/0022-3093(85)90912-3

M3 - Article

SN - 1873-4812

VL - 77-8

SP - 1373

EP - 1382

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

IS - 2

ER -

The switching mechanism in amorphous silicon junctions

Abstract

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