The switching mechanism in amorphous silicon junctions

P. G. Lecomber, A. E. Owen, W. E. Spear, J. Hajto, A. J. Snell, W. K. Choi, M. J. Rose, S. Reynolds

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    Abstract

    Extensive new results have been obtained on memory switching in a-Si p+ni junctions. It is shown that the ON-state has its origins in a highly conducting filament less than lµm in diameter. The physical mechanisms that could play a role in the switching operations are discussed.
    Original languageEnglish
    Pages (from-to)1373-1382
    Number of pages10
    JournalJournal of Non-Crystalline Solids
    Volume77-8
    Issue number2
    DOIs
    Publication statusPublished - 1985

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    Lecomber, P. G., Owen, A. E., Spear, W. E., Hajto, J., Snell, A. J., Choi, W. K., Rose, M. J., & Reynolds, S. (1985). The switching mechanism in amorphous silicon junctions. Journal of Non-Crystalline Solids, 77-8(2), 1373-1382. https://doi.org/10.1016/0022-3093(85)90912-3