Abstract
This paper investigates the robustness of the thermally stimulated current technique as a method to determine the density of states distribution in thin film semiconductors under a wide range of conditions. Numerical simulation is used to solve the non-linear time-dependent rate equations for free and trapped charge in systems with continuous and structured DOS profiles. We explore the derivation of energy and density scales from temperature and conductivity data. We examine for these systems the limits of the method's apparent immunity to varying conditions of strong and weak retrapping, and investigate the corrections required for variations in carrier lifetime with temperature.
| Original language | English |
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| Title of host publication | Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2006 |
| Editors | Sigurd Wagner |
| Pages | 245-250 |
| Number of pages | 6 |
| Volume | 910 |
| Publication status | Published - 12 Jun 2007 |
| Event | 2006 MRS Spring Meeting - San Francisco, CA, United States Duration: 18 Apr 2006 → 21 Apr 2006 |
Conference
| Conference | 2006 MRS Spring Meeting |
|---|---|
| Country/Territory | United States |
| City | San Francisco, CA |
| Period | 18/04/06 → 21/04/06 |
ASJC Scopus subject areas
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering