Thermally-stimulated currents in thin-film semiconductors: Analysis and modelling

Charles Main, Nacera Souffi, Steve Reynolds, Zdravka Aneva, Rudi Brüggemann, Mervyn Rose

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    This paper investigates the robustness of the thermally stimulated current technique as a method to determine the density of states distribution in thin film semiconductors under a wide range of conditions. Numerical simulation is used to solve the non-linear time-dependent rate equations for free and trapped charge in systems with continuous and structured DOS profiles. We explore the derivation of energy and density scales from temperature and conductivity data. We examine for these systems the limits of the method's apparent immunity to varying conditions of strong and weak retrapping, and investigate the corrections required for variations in carrier lifetime with temperature.

    Original languageEnglish
    Title of host publicationAmorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2006
    EditorsSigurd Wagner
    Pages245-250
    Number of pages6
    Volume910
    Publication statusPublished - 12 Jun 2007
    Event2006 MRS Spring Meeting - San Francisco, CA, United States
    Duration: 18 Apr 200621 Apr 2006

    Conference

    Conference2006 MRS Spring Meeting
    CountryUnited States
    CitySan Francisco, CA
    Period18/04/0621/04/06

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