THz emission from quantum dot-based THz antennas pumped by a tunable quantum-dot laser diode

R. Leyman, D. Carnegie, K. A. Fedorova, N. Bazieva, S. Schulz, C. Reardon, E. Clarke, E. U. Rafailov

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    5 Citations (Scopus)

    Abstract

    The THz optoelectronics field is now maturing and semiconductor-based THz antenna devices are becoming more widely implemented as analytical tools in spectroscopy and imaging. Photoconductive (PC) THz switches/antennas are driven optically typically using either an ultrashort-pulse laser or an optical signal composed of two simultaneous longitudinal wavelengths which are beat together in the PC material at a THz difference frequency. This allows the generation of (photo)carrier pairs which are then captured over ultrashort timescales usually by defects and trapping sites throughout the active material lattice. Defect-implanted PC materials with relatively high bandgap energy are typically used and many parameters such as carrier mobility and PC gain are greatly compromised. This paper demonstrates the implementation of low bandgap energy InAs quantum dots (QDs) embedded in standard crystalline GaAs as both the PC medium and the ultrafast capture mechanism in a PC THz antenna. This semiconductor structure is grown using standard MBE methods and allows the device to be optically driven efficiently at wavelengths up to ~1.3 µm, in this case by a single tunable dual-mode QD diode laser.
    Original languageEnglish
    Title of host publication2013 Conference on Lasers and Electro-Optics Europe & International Quantum Electronics Conference
    Place of PublicationPiscataway, NJ.
    PublisherIEEE
    ISBN (Print)9781479905935
    DOIs
    Publication statusPublished - 2013
    Event2013 Conference on Lasers and Electro-Optics Europe & International Quantum Electronics Conference - ICM Congress Centre, Munich, Germany
    Duration: 12 May 201316 May 2013

    Conference

    Conference2013 Conference on Lasers and Electro-Optics Europe & International Quantum Electronics Conference
    Abbreviated titleCLEO/Europe - IQEC 2013
    CountryGermany
    CityMunich
    Period12/05/1316/05/13

    Fingerprint

    antennas
    semiconductor lasers
    quantum dots
    defects
    carrier mobility
    wavelengths
    optical communication
    synchronism
    switches
    trapping
    energy
    pulses
    spectroscopy
    lasers

    Cite this

    Leyman, R., Carnegie, D., Fedorova, K. A., Bazieva, N., Schulz, S., Reardon, C., ... Rafailov, E. U. (2013). THz emission from quantum dot-based THz antennas pumped by a tunable quantum-dot laser diode. In 2013 Conference on Lasers and Electro-Optics Europe & International Quantum Electronics Conference Piscataway, NJ.: IEEE. https://doi.org/10.1109/CLEOE-IQEC.2013.6800814
    Leyman, R. ; Carnegie, D. ; Fedorova, K. A. ; Bazieva, N. ; Schulz, S. ; Reardon, C. ; Clarke, E. ; Rafailov, E. U. / THz emission from quantum dot-based THz antennas pumped by a tunable quantum-dot laser diode. 2013 Conference on Lasers and Electro-Optics Europe & International Quantum Electronics Conference. Piscataway, NJ. : IEEE, 2013.
    @inproceedings{2e5d898e839a417a8479c8ca0c4aa309,
    title = "THz emission from quantum dot-based THz antennas pumped by a tunable quantum-dot laser diode",
    abstract = "The THz optoelectronics field is now maturing and semiconductor-based THz antenna devices are becoming more widely implemented as analytical tools in spectroscopy and imaging. Photoconductive (PC) THz switches/antennas are driven optically typically using either an ultrashort-pulse laser or an optical signal composed of two simultaneous longitudinal wavelengths which are beat together in the PC material at a THz difference frequency. This allows the generation of (photo)carrier pairs which are then captured over ultrashort timescales usually by defects and trapping sites throughout the active material lattice. Defect-implanted PC materials with relatively high bandgap energy are typically used and many parameters such as carrier mobility and PC gain are greatly compromised. This paper demonstrates the implementation of low bandgap energy InAs quantum dots (QDs) embedded in standard crystalline GaAs as both the PC medium and the ultrafast capture mechanism in a PC THz antenna. This semiconductor structure is grown using standard MBE methods and allows the device to be optically driven efficiently at wavelengths up to ~1.3 µm, in this case by a single tunable dual-mode QD diode laser.",
    author = "R. Leyman and D. Carnegie and Fedorova, {K. A.} and N. Bazieva and S. Schulz and C. Reardon and E. Clarke and Rafailov, {E. U.}",
    year = "2013",
    doi = "10.1109/CLEOE-IQEC.2013.6800814",
    language = "English",
    isbn = "9781479905935",
    booktitle = "2013 Conference on Lasers and Electro-Optics Europe & International Quantum Electronics Conference",
    publisher = "IEEE",

    }

    Leyman, R, Carnegie, D, Fedorova, KA, Bazieva, N, Schulz, S, Reardon, C, Clarke, E & Rafailov, EU 2013, THz emission from quantum dot-based THz antennas pumped by a tunable quantum-dot laser diode. in 2013 Conference on Lasers and Electro-Optics Europe & International Quantum Electronics Conference. IEEE, Piscataway, NJ., 2013 Conference on Lasers and Electro-Optics Europe & International Quantum Electronics Conference, Munich, Germany, 12/05/13. https://doi.org/10.1109/CLEOE-IQEC.2013.6800814

    THz emission from quantum dot-based THz antennas pumped by a tunable quantum-dot laser diode. / Leyman, R.; Carnegie, D.; Fedorova, K. A.; Bazieva, N.; Schulz, S.; Reardon, C.; Clarke, E.; Rafailov, E. U.

    2013 Conference on Lasers and Electro-Optics Europe & International Quantum Electronics Conference. Piscataway, NJ. : IEEE, 2013.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    TY - GEN

    T1 - THz emission from quantum dot-based THz antennas pumped by a tunable quantum-dot laser diode

    AU - Leyman, R.

    AU - Carnegie, D.

    AU - Fedorova, K. A.

    AU - Bazieva, N.

    AU - Schulz, S.

    AU - Reardon, C.

    AU - Clarke, E.

    AU - Rafailov, E. U.

    PY - 2013

    Y1 - 2013

    N2 - The THz optoelectronics field is now maturing and semiconductor-based THz antenna devices are becoming more widely implemented as analytical tools in spectroscopy and imaging. Photoconductive (PC) THz switches/antennas are driven optically typically using either an ultrashort-pulse laser or an optical signal composed of two simultaneous longitudinal wavelengths which are beat together in the PC material at a THz difference frequency. This allows the generation of (photo)carrier pairs which are then captured over ultrashort timescales usually by defects and trapping sites throughout the active material lattice. Defect-implanted PC materials with relatively high bandgap energy are typically used and many parameters such as carrier mobility and PC gain are greatly compromised. This paper demonstrates the implementation of low bandgap energy InAs quantum dots (QDs) embedded in standard crystalline GaAs as both the PC medium and the ultrafast capture mechanism in a PC THz antenna. This semiconductor structure is grown using standard MBE methods and allows the device to be optically driven efficiently at wavelengths up to ~1.3 µm, in this case by a single tunable dual-mode QD diode laser.

    AB - The THz optoelectronics field is now maturing and semiconductor-based THz antenna devices are becoming more widely implemented as analytical tools in spectroscopy and imaging. Photoconductive (PC) THz switches/antennas are driven optically typically using either an ultrashort-pulse laser or an optical signal composed of two simultaneous longitudinal wavelengths which are beat together in the PC material at a THz difference frequency. This allows the generation of (photo)carrier pairs which are then captured over ultrashort timescales usually by defects and trapping sites throughout the active material lattice. Defect-implanted PC materials with relatively high bandgap energy are typically used and many parameters such as carrier mobility and PC gain are greatly compromised. This paper demonstrates the implementation of low bandgap energy InAs quantum dots (QDs) embedded in standard crystalline GaAs as both the PC medium and the ultrafast capture mechanism in a PC THz antenna. This semiconductor structure is grown using standard MBE methods and allows the device to be optically driven efficiently at wavelengths up to ~1.3 µm, in this case by a single tunable dual-mode QD diode laser.

    U2 - 10.1109/CLEOE-IQEC.2013.6800814

    DO - 10.1109/CLEOE-IQEC.2013.6800814

    M3 - Conference contribution

    SN - 9781479905935

    BT - 2013 Conference on Lasers and Electro-Optics Europe & International Quantum Electronics Conference

    PB - IEEE

    CY - Piscataway, NJ.

    ER -

    Leyman R, Carnegie D, Fedorova KA, Bazieva N, Schulz S, Reardon C et al. THz emission from quantum dot-based THz antennas pumped by a tunable quantum-dot laser diode. In 2013 Conference on Lasers and Electro-Optics Europe & International Quantum Electronics Conference. Piscataway, NJ.: IEEE. 2013 https://doi.org/10.1109/CLEOE-IQEC.2013.6800814