THz generation from a nanocrystalline silicon-based photoconductive device

N. S. Daghestani, S. Persheyev, M. A. Cataluna, G. Ross, M. J. Rose

    Research output: Contribution to journalArticle

    6 Citations (Scopus)

    Abstract

    Terahertz generation has been achieved from a photoconductive switch based on hydrogenated nanocrystalline silicon (nc-Si:H), gated by a femtosecond laser. The nc-Si:H samples were produced by a hot wire chemical vapour deposition process, a process with low production costs owing to its higher growth rate and manufacturing simplicity. Although promising ultrafast carrier dynamics of nc-Si have been previously demonstrated, this is the first report on THz generation from a nc-Si:H material.

    Original languageEnglish
    Article number075015
    Pages (from-to)-
    Number of pages5
    JournalSemiconductor Science and Technology
    Volume26
    Issue number7
    DOIs
    Publication statusPublished - 7 Jul 2011

    Keywords

    • SEMIINSULATING GAAS
    • FILMS
    • DEPOSITION
    • HWCVD
    • PECVD
    • CVD

    Cite this

    Daghestani, N. S. ; Persheyev, S. ; Cataluna, M. A. ; Ross, G. ; Rose, M. J. . / THz generation from a nanocrystalline silicon-based photoconductive device. In: Semiconductor Science and Technology. 2011 ; Vol. 26, No. 7. pp. -.
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    THz generation from a nanocrystalline silicon-based photoconductive device. / Daghestani, N. S. ; Persheyev, S.; Cataluna, M. A. ; Ross, G.; Rose, M. J. .

    In: Semiconductor Science and Technology, Vol. 26, No. 7, 075015, 07.07.2011, p. -.

    Research output: Contribution to journalArticle

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    T1 - THz generation from a nanocrystalline silicon-based photoconductive device

    AU - Daghestani, N. S.

    AU - Persheyev, S.

    AU - Cataluna, M. A.

    AU - Ross, G.

    AU - Rose, M. J.

    PY - 2011/7/7

    Y1 - 2011/7/7

    N2 - Terahertz generation has been achieved from a photoconductive switch based on hydrogenated nanocrystalline silicon (nc-Si:H), gated by a femtosecond laser. The nc-Si:H samples were produced by a hot wire chemical vapour deposition process, a process with low production costs owing to its higher growth rate and manufacturing simplicity. Although promising ultrafast carrier dynamics of nc-Si have been previously demonstrated, this is the first report on THz generation from a nc-Si:H material.

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    KW - SEMIINSULATING GAAS

    KW - FILMS

    KW - DEPOSITION

    KW - HWCVD

    KW - PECVD

    KW - CVD

    U2 - 10.1088/0268-1242/26/7/075015

    DO - 10.1088/0268-1242/26/7/075015

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