THz generation from a nanocrystalline silicon-based photoconductive device

N. S. Daghestani, S. Persheyev, M. A. Cataluna, G. Ross, M. J. Rose

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    8 Citations (Scopus)

    Abstract

    Terahertz generation has been achieved from a photoconductive switch based on hydrogenated nanocrystalline silicon (nc-Si:H), gated by a femtosecond laser. The nc-Si:H samples were produced by a hot wire chemical vapour deposition process, a process with low production costs owing to its higher growth rate and manufacturing simplicity. Although promising ultrafast carrier dynamics of nc-Si have been previously demonstrated, this is the first report on THz generation from a nc-Si:H material.

    Original languageEnglish
    Article number075015
    Pages (from-to)-
    Number of pages5
    JournalSemiconductor Science and Technology
    Volume26
    Issue number7
    DOIs
    Publication statusPublished - 7 Jul 2011

    Keywords

    • SEMIINSULATING GAAS
    • FILMS
    • DEPOSITION
    • HWCVD
    • PECVD
    • CVD

    Cite this

    Daghestani, N. S., Persheyev, S., Cataluna, M. A., Ross, G., & Rose, M. J. (2011). THz generation from a nanocrystalline silicon-based photoconductive device. Semiconductor Science and Technology, 26(7), -. [075015]. https://doi.org/10.1088/0268-1242/26/7/075015