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THz quantum-confined Stark effect in semiconductor quantum dots
Dmitry Turchinovich
, Boris S. Monozon
, Daniil A. Livshits
, Edik U. Rafailov
, Matthias C. Hoffmann
Research output
:
Chapter in Book/Report/Conference proceeding
›
Conference contribution
1
Citation (Scopus)
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Keyphrases
Semiconductor Quantum Dots
100%
Quantum Dots
100%
Quantum-confined Stark Effect
100%
Optical Absorption
80%
THz Field
60%
Electro-absorption Modulator
40%
Electric Field (E-field)
20%
Absorption Peak
20%
Free Space
20%
Strongly Nonlinear
20%
GaAs Quantum Dot
20%
Femtosecond
20%
High Repetition Rate
20%
InGaAs
20%
Optical Probe
20%
Temporal Features
20%
Modulation Depth
20%
Wireless Communication Systems
20%
Full Bandwidth
20%
All-optical Switching
20%
All-optical Manipulation
20%
Optical Signal
20%
THz Pulse
20%
Peak Electric Field
20%
Absorption Modulation
20%
Intersubband Transitions
20%
Stark Shift
20%
Overlap Integral
20%
THz Signal
20%
Ground-state Absorption
20%
Three-dimensional Geometry
20%
THz Range
20%
Engineering
Quantum Dot
100%
Semiconductor Quantum Dot
100%
Absorptivity
66%
Ground State
50%
Electric Field
33%
Free Space
16%
Gallium Arsenide
16%
Repetition Rate
16%
Indium Gallium Arsenide
16%
Wireless Communication
16%
Data Rate
16%
Communication System
16%
Optical Signal
16%
Dimensional Geometry
16%
Optical Probe
16%
Band Transition
16%
Physics
Quantum Dot
100%
Stark Effect
100%
Electromagnetic Absorption
57%
Ground State
42%
Electric Field
28%
Optical Communication
14%
Wireless Communication
14%
Optical Switching
14%
Material Science
Quantum Dot
100%
Gallium Arsenide
14%
Indium Gallium Arsenide
14%