Time and frequency domain studies of photoconductivity in amorphous semiconductors

C. Main, R. Bruggemann, D. P. Webb, S. Reynolds

    Research output: Contribution to journalArticle

    20 Citations (Scopus)

    Abstract

    We present a general spectroscopic technique for the computation of the distribution of gap-states (DOS) in amorphous semiconductors from transient photocurrent decay (TPC). The technique assumes trap-limited and is otherwise model-independent. It is valid whether the TPC exhibits anomalous or conventional dispersion, and also works without modification for pre- and post-recombination regions of the decay. A numerical Fourier integral procedure is used to convert the TPC i(t) data to frequency domain spectra I(?). The DOS is then computed using a procedure developed by the authors [1] for analysis of modulated photocurrent (MPC) data. The method avoids distortions and computational difficulties associated with other TPC analytical techniques. We report on the application of the method to experimental data on a-Si:H, demonstrating the wide energy range of states accessed, and highlighting the observation that the observed long-time power-law TPC decay, normally associated with a featureless exponential state distribution is consistent with structure in the DOS.

    Original languageEnglish
    Pages (from-to)481-484
    Number of pages4
    JournalJournal of Non-Crystalline Solids
    Volume166
    DOIs
    Publication statusPublished - 1993

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    Amorphous semiconductors
    amorphous semiconductors
    Photoconductivity
    Photocurrents
    photoconductivity
    photocurrents
    decay
    traps

    Cite this

    @article{81170520dd994b39ad28c8754036095e,
    title = "Time and frequency domain studies of photoconductivity in amorphous semiconductors",
    abstract = "We present a general spectroscopic technique for the computation of the distribution of gap-states (DOS) in amorphous semiconductors from transient photocurrent decay (TPC). The technique assumes trap-limited and is otherwise model-independent. It is valid whether the TPC exhibits anomalous or conventional dispersion, and also works without modification for pre- and post-recombination regions of the decay. A numerical Fourier integral procedure is used to convert the TPC i(t) data to frequency domain spectra I(?). The DOS is then computed using a procedure developed by the authors [1] for analysis of modulated photocurrent (MPC) data. The method avoids distortions and computational difficulties associated with other TPC analytical techniques. We report on the application of the method to experimental data on a-Si:H, demonstrating the wide energy range of states accessed, and highlighting the observation that the observed long-time power-law TPC decay, normally associated with a featureless exponential state distribution is consistent with structure in the DOS.",
    author = "C. Main and R. Bruggemann and Webb, {D. P.} and S. Reynolds",
    year = "1993",
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    language = "English",
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    Time and frequency domain studies of photoconductivity in amorphous semiconductors. / Main, C.; Bruggemann, R.; Webb, D. P.; Reynolds, S.

    In: Journal of Non-Crystalline Solids, Vol. 166, 1993, p. 481-484.

    Research output: Contribution to journalArticle

    TY - JOUR

    T1 - Time and frequency domain studies of photoconductivity in amorphous semiconductors

    AU - Main, C.

    AU - Bruggemann, R.

    AU - Webb, D. P.

    AU - Reynolds, S.

    PY - 1993

    Y1 - 1993

    N2 - We present a general spectroscopic technique for the computation of the distribution of gap-states (DOS) in amorphous semiconductors from transient photocurrent decay (TPC). The technique assumes trap-limited and is otherwise model-independent. It is valid whether the TPC exhibits anomalous or conventional dispersion, and also works without modification for pre- and post-recombination regions of the decay. A numerical Fourier integral procedure is used to convert the TPC i(t) data to frequency domain spectra I(?). The DOS is then computed using a procedure developed by the authors [1] for analysis of modulated photocurrent (MPC) data. The method avoids distortions and computational difficulties associated with other TPC analytical techniques. We report on the application of the method to experimental data on a-Si:H, demonstrating the wide energy range of states accessed, and highlighting the observation that the observed long-time power-law TPC decay, normally associated with a featureless exponential state distribution is consistent with structure in the DOS.

    AB - We present a general spectroscopic technique for the computation of the distribution of gap-states (DOS) in amorphous semiconductors from transient photocurrent decay (TPC). The technique assumes trap-limited and is otherwise model-independent. It is valid whether the TPC exhibits anomalous or conventional dispersion, and also works without modification for pre- and post-recombination regions of the decay. A numerical Fourier integral procedure is used to convert the TPC i(t) data to frequency domain spectra I(?). The DOS is then computed using a procedure developed by the authors [1] for analysis of modulated photocurrent (MPC) data. The method avoids distortions and computational difficulties associated with other TPC analytical techniques. We report on the application of the method to experimental data on a-Si:H, demonstrating the wide energy range of states accessed, and highlighting the observation that the observed long-time power-law TPC decay, normally associated with a featureless exponential state distribution is consistent with structure in the DOS.

    U2 - 10.1016/0022-3093(93)90594-N

    DO - 10.1016/0022-3093(93)90594-N

    M3 - Article

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    EP - 484

    JO - Journal of Non-Crystalline Solids

    JF - Journal of Non-Crystalline Solids

    SN - 0022-3093

    ER -