The ultrafast photoconductivity dynamics of black silicon is measured by time-resolved terahertz spectroscopy. Black silicon is produced by laser annealing of an a-Si:H film. We show that the decay time of the photoconductivity depends on the annealing method and fluence used in the production process.
|Title of host publication||IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide|
|Publication status||Published - 1 Jan 2010|
Porte, H. P., Turchinovich, D., Uhd Jepsen, P., Persheyev, S., Fan, Y., & Rose, M. J. (2010). Time-resolved terahertz spectroscopy of black silicon. In IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide https://doi.org/10.1109/ICIMW.2010.5612535