Time-resolved terahertz spectroscopy of black silicon

H.P. Porte, D. Turchinovich, P. Uhd Jepsen, S. Persheyev, Y. Fan, M.J. Rose

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    Abstract

    The ultrafast photoconductivity dynamics of black silicon is measured by time-resolved terahertz spectroscopy. Black silicon is produced by laser annealing of an a-Si:H film. We show that the decay time of the photoconductivity depends on the annealing method and fluence used in the production process.
    Original languageEnglish
    Title of host publicationIRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide
    DOIs
    Publication statusPublished - 1 Jan 2010

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    Porte, H. P., Turchinovich, D., Uhd Jepsen, P., Persheyev, S., Fan, Y., & Rose, M. J. (2010). Time-resolved terahertz spectroscopy of black silicon. In IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide https://doi.org/10.1109/ICIMW.2010.5612535