Abstract
The ultrafast photoconductivity dynamics of black silicon is measured by time-resolved terahertz spectroscopy. Black silicon is produced by laser annealing of an a-Si:H film. We show that the decay time of the photoconductivity depends on the annealing method and fluence used in the production process.
Original language | English |
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Title of host publication | IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide |
DOIs | |
Publication status | Published - 1 Jan 2010 |