Time-resolved terahertz spectroscopy of black silicon

H.P. Porte; D. Turchinovich; P. Uhd Jepsen; S. Persheyev; Y. Fan; M.J. Rose

doi:10.1109/ICIMW.2010.5612535

Time-resolved terahertz spectroscopy of black silicon

H.P. Porte
, D. Turchinovich
, P. Uhd Jepsen
, S. Persheyev
, Y. Fan
, M.J. Rose

Research output: Chapter in Book/Report/Conference proceeding › Other chapter contribution

2 Citations (Scopus)

Abstract

The ultrafast photoconductivity dynamics of black silicon is measured by time-resolved terahertz spectroscopy. Black silicon is produced by laser annealing of an a-Si:H film. We show that the decay time of the photoconductivity depends on the annealing method and fluence used in the production process.

Original language	English
Title of host publication	IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide
DOIs	https://doi.org/10.1109/ICIMW.2010.5612535
Publication status	Published - 1 Jan 2010

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10.1109/ICIMW.2010.5612535

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title = "Time-resolved terahertz spectroscopy of black silicon",

abstract = "The ultrafast photoconductivity dynamics of black silicon is measured by time-resolved terahertz spectroscopy. Black silicon is produced by laser annealing of an a-Si:H film. We show that the decay time of the photoconductivity depends on the annealing method and fluence used in the production process.",

author = "H.P. Porte and D. Turchinovich and \{Uhd Jepsen\}, P. and S. Persheyev and Y. Fan and M.J. Rose",

year = "2010",

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doi = "10.1109/ICIMW.2010.5612535",

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T1 - Time-resolved terahertz spectroscopy of black silicon

AU - Porte, H.P.

AU - Turchinovich, D.

AU - Uhd Jepsen, P.

AU - Persheyev, S.

AU - Fan, Y.

AU - Rose, M.J.

PY - 2010/1/1

Y1 - 2010/1/1

N2 - The ultrafast photoconductivity dynamics of black silicon is measured by time-resolved terahertz spectroscopy. Black silicon is produced by laser annealing of an a-Si:H film. We show that the decay time of the photoconductivity depends on the annealing method and fluence used in the production process.

AB - The ultrafast photoconductivity dynamics of black silicon is measured by time-resolved terahertz spectroscopy. Black silicon is produced by laser annealing of an a-Si:H film. We show that the decay time of the photoconductivity depends on the annealing method and fluence used in the production process.

UR - https://www.scopus.com/pages/publications/78649339032

U2 - 10.1109/ICIMW.2010.5612535

DO - 10.1109/ICIMW.2010.5612535

M3 - Other chapter contribution

AN - SCOPUS:78649339032

SN - 9781424466559

BT - IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide

ER -

Time-resolved terahertz spectroscopy of black silicon

Abstract

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