Transient decay from the steady-state in microcrystalline silicon

R. Bruggemann, S. Reynolds, C. Main

    Research output: Chapter in Book/Report/Conference proceedingChapter (peer-reviewed)


    We measured the transient photocurrent decay from the steady state in microcrystalline silicon from plasma-enhanced chemical vapor deposition and hot-wire chemical vapour deposition. Samples exhibiting a range of photoconductive properties in terms of both the majority and minority carrier mobility-lifetime products or sub-gap absorption coefficients were studied. Measurements were made over a wide range of steady-state photogeneration rates for which we detail the variation with generation rate of the decay time. Samples with a short steady-state photocarrier lifetime show a long decay time. We relate the slow decay process to the much larger density of traps in the band gap in the poor-quality samples. Trapped carriers are released, undergo emission and trapping processes and eventually recombine in these samples, on a much longer time-scale than in the higher-quality samples so that the decay time cannot be taken as a fingerprint for photo-electronic quality. Analytical and numerical modeling indicate bimolecular recombination behavior during the decay. Results are in agreement with free-carrier interaction with exponentially distributed band-tail states.
    Original languageEnglish
    Title of host publicationAmorphous and heterogeneous silicon-based films--2002
    Subtitle of host publicationsymposium held April 2-5, 2002, San Francisco, California, U.S.A.
    EditorsJ. David Cohen
    Place of PublicationWarrendale, Pennsylvania
    PublisherMaterials Research Society
    Number of pages6
    ISBN (Print)1558996516, 9781558996519
    Publication statusPublished - 2002
    EventSymposiumA: Amorphous and Heterogeneous Silicon-Based Films - San Francisco, United States
    Duration: 1 Apr 20025 Apr 2002

    Publication series

    NameMaterials Research Society symposium proceedings


    ConferenceSymposiumA: Amorphous and Heterogeneous Silicon-Based Films
    Country/TerritoryUnited States
    CitySan Francisco
    Internet address


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