Transient photoconductivity studies of band tails states in compensated a-Si:H

D. M. Goldie

    Research output: Contribution to journalArticlepeer-review

    7 Citations (Scopus)


    The density of conduction band tail states has been determined for a series of compensated a-Si:H films using transient photoconductivity measurements. Relative to undoped material, the energy width of shallow tail states lying within 0.45 eV of the conduction band edge are found to be insensitive to the level of compensated doping for doping levels up to 1000 vppm. An observed reduction in photocurrent magnitude as the doping is increased is consistent with a corresponding reduction in the electron extended state mobility. The magnitude of the mobility reduction is found to be quantitatively consistent with potential fluctuations which arise from ionized dopants for compensated doping levels up to about 100 vppm.
    Original languageEnglish
    Pages (from-to)130-135
    Number of pages6
    JournalJournal of Non-Crystalline Solids
    Issue number2
    Publication statusPublished - 2006


    • Silicon


    Dive into the research topics of 'Transient photoconductivity studies of band tails states in compensated a-Si:H'. Together they form a unique fingerprint.

    Cite this