Transient photocurrents as a spatially resolved probe of carrier transport and defect distributions in silicon thin films

Steve Reynolds, Rudi Bruggemann, Bjorn Grootoonk, Vladimir Smirnov

    Research output: Contribution to journalArticlepeer-review

    Abstract

    Transient photocurrent spectroscopy (TPC) yields the energetic distribution of localised states in disordered semiconductors from an analysis of the decay of photocurrent with time following a short laser pulse. By comparing results at different laser excitation wavelengths, and hence absorption depths, information
    on spatial non-uniformities may also be inferred. Here we investigate the use of TPC as a spatial probe with reference to two thin-film silicon systems; amorphous silicon subjected to various light-induced degradation regimes, and microcrystalline silicon grown on a range of ‘seed’ layers. Computer simulation is used to support experimental findings, and to identify sensitivity and resolution limitations.
    Original languageEnglish
    Pages (from-to)568-573
    Number of pages6
    JournalMaterials Science and Engineering B-Solid State Materials for Advanced Technology
    Volume178
    Issue number9
    DOIs
    Publication statusPublished - 15 May 2013

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