Ultrafast carrier dynamics of surfactant-mediated-grown InAs/GaAs quantum-dot structures designed for THz applications

N. S. Daghestani, M. Alduraibi, T. Piwonski, T. Ochalski, G. Huyet, M. Missous, T. Ackemann, M. A. Cataluna

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    Quantum-dot (QD) materials have shown great promise for THz photoconductive devices. The generation of THz radiation relies on the excitation of highly-mobile carriers with sub-picosecond lifetimes. The band structure of QD materials grown for such THz applications leads to a multitude of energy bands/levels [1], onto which carriers can be excited. Here we show for the first time that the lifetime of carriers excited into the GaAs barriers (?=800 nm) is up to two orders of magnitude shorter than when these are excited resonantly within the QDs (?=1245 nm). We also present annealed QD-structures which exhibit faster carrier lifetimes than as-grown ones for most pump conditions, a feature unreported so far. Furthermore, an increase of carrier lifetime with the incident pump power is also unveiled for both annealed and as-grown samples. This study has significant implications in the understanding and optimal use of QD materials for THz generation applications [2].
    Original languageEnglish
    Title of host publication2013 Conference on Lasers and Electro-Optics Europe & International Quantum Electronics Conference
    Place of PublicationPiscataway, NJ.
    PublisherIEEE
    ISBN (Print)9781479905935
    DOIs
    Publication statusPublished - 2013
    Event2013 Conference on Lasers and Electro-Optics Europe & International Quantum Electronics Conference - ICM Congress Centre, Munich, Germany
    Duration: 12 May 201316 May 2013

    Conference

    Conference2013 Conference on Lasers and Electro-Optics Europe & International Quantum Electronics Conference
    Abbreviated titleCLEO/Europe - IQEC 2013
    CountryGermany
    CityMunich
    Period12/05/1316/05/13

    Fingerprint Dive into the research topics of 'Ultrafast carrier dynamics of surfactant-mediated-grown InAs/GaAs quantum-dot structures designed for THz applications'. Together they form a unique fingerprint.

    Cite this