Ultrafast release and capture of carriers in InGaAs/GaAs quantum dots observed by time-resolved terahertz spectroscopy

H. P. Porte, P. Uhd Jepsen, N. Daghestani, E. U. Rafailov, D. Turchinovich

    Research output: Contribution to journalArticlepeer-review

    47 Citations (Scopus)

    Abstract

    We observe ultrafast release and capture of charge carriers in InGaAs/GaAs quantum dots in a room-temperature optical pump-terahertz probe experiment sensitive to the population dynamics of conducting states. In case of resonant excitation of the quantum dot ground state, the maximum conductivity is achieved at approximately 35 ps after photoexcitation, which is assigned to release of carriers from the quantum dots. When exciting carriers into the conduction band of the barriers, depletion of the conductivity via carrier capture into the quantum dots with a few picosecond pump fluence-dependent time constant was observed.

    Original languageEnglish
    Article number262104
    Pages (from-to)-
    Number of pages3
    JournalApplied Physics Letters
    Volume94
    Issue number26
    DOIs
    Publication statusPublished - 29 Jun 2009

    Keywords

    • conduction bands
    • electrical conductivity
    • electron traps
    • gallium arsenide
    • ground states
    • high-speed optical techniques
    • hole traps
    • III-V semiconductors
    • indium compounds
    • semiconductor quantum dots
    • submillimetre wave spectra
    • time resolved spectra
    • ELECTRON-CAPTURE
    • RELAXATION
    • LASERS

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