Ultrafast release and capture of carriers in InGaAs/GaAs quantum dots observed by time-resolved terahertz spectroscopy

H. P. Porte; P. Uhd Jepsen; N. Daghestani; E. U. Rafailov; D. Turchinovich

doi:10.1063/1.3158958

Ultrafast release and capture of carriers in InGaAs/GaAs quantum dots observed by time-resolved terahertz spectroscopy

H. P. Porte, P. Uhd Jepsen, N. Daghestani, E. U. Rafailov, D. Turchinovich

Research output: Contribution to journal › Article › peer-review

57 Citations (Scopus)

Abstract

We observe ultrafast release and capture of charge carriers in InGaAs/GaAs quantum dots in a room-temperature optical pump-terahertz probe experiment sensitive to the population dynamics of conducting states. In case of resonant excitation of the quantum dot ground state, the maximum conductivity is achieved at approximately 35 ps after photoexcitation, which is assigned to release of carriers from the quantum dots. When exciting carriers into the conduction band of the barriers, depletion of the conductivity via carrier capture into the quantum dots with a few picosecond pump fluence-dependent time constant was observed.

Original language	English
Article number	262104
Pages (from-to)	-
Number of pages	3
Journal	Applied Physics Letters
Volume	94
Issue number	26
DOIs	https://doi.org/10.1063/1.3158958
Publication status	Published - 29 Jun 2009

Keywords

conduction bands
electrical conductivity
electron traps
gallium arsenide
ground states
high-speed optical techniques
hole traps
III-V semiconductors
indium compounds
semiconductor quantum dots
submillimetre wave spectra
time resolved spectra
ELECTRON-CAPTURE
RELAXATION
LASERS

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title = "Ultrafast release and capture of carriers in InGaAs/GaAs quantum dots observed by time-resolved terahertz spectroscopy",

abstract = "We observe ultrafast release and capture of charge carriers in InGaAs/GaAs quantum dots in a room-temperature optical pump-terahertz probe experiment sensitive to the population dynamics of conducting states. In case of resonant excitation of the quantum dot ground state, the maximum conductivity is achieved at approximately 35 ps after photoexcitation, which is assigned to release of carriers from the quantum dots. When exciting carriers into the conduction band of the barriers, depletion of the conductivity via carrier capture into the quantum dots with a few picosecond pump fluence-dependent time constant was observed.",

keywords = "conduction bands, electrical conductivity, electron traps, gallium arsenide, ground states, high-speed optical techniques, hole traps, III-V semiconductors, indium compounds, semiconductor quantum dots, submillimetre wave spectra, time resolved spectra, ELECTRON-CAPTURE, RELAXATION, LASERS",

author = "Porte, {H. P.} and Jepsen, {P. Uhd} and N. Daghestani and Rafailov, {E. U.} and D. Turchinovich",

year = "2009",

month = jun,

day = "29",

doi = "10.1063/1.3158958",

language = "English",

volume = "94",

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journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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T1 - Ultrafast release and capture of carriers in InGaAs/GaAs quantum dots observed by time-resolved terahertz spectroscopy

AU - Porte, H. P.

AU - Jepsen, P. Uhd

AU - Daghestani, N.

AU - Rafailov, E. U.

AU - Turchinovich, D.

PY - 2009/6/29

Y1 - 2009/6/29

N2 - We observe ultrafast release and capture of charge carriers in InGaAs/GaAs quantum dots in a room-temperature optical pump-terahertz probe experiment sensitive to the population dynamics of conducting states. In case of resonant excitation of the quantum dot ground state, the maximum conductivity is achieved at approximately 35 ps after photoexcitation, which is assigned to release of carriers from the quantum dots. When exciting carriers into the conduction band of the barriers, depletion of the conductivity via carrier capture into the quantum dots with a few picosecond pump fluence-dependent time constant was observed.

AB - We observe ultrafast release and capture of charge carriers in InGaAs/GaAs quantum dots in a room-temperature optical pump-terahertz probe experiment sensitive to the population dynamics of conducting states. In case of resonant excitation of the quantum dot ground state, the maximum conductivity is achieved at approximately 35 ps after photoexcitation, which is assigned to release of carriers from the quantum dots. When exciting carriers into the conduction band of the barriers, depletion of the conductivity via carrier capture into the quantum dots with a few picosecond pump fluence-dependent time constant was observed.

KW - conduction bands

KW - electrical conductivity

KW - electron traps

KW - gallium arsenide

KW - ground states

KW - high-speed optical techniques

KW - hole traps

KW - III-V semiconductors

KW - indium compounds

KW - semiconductor quantum dots

KW - submillimetre wave spectra

KW - time resolved spectra

KW - ELECTRON-CAPTURE

KW - RELAXATION

KW - LASERS

U2 - 10.1063/1.3158958

DO - 10.1063/1.3158958

M3 - Article

SN - 0003-6951

VL - 94

SP - -

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 26

M1 - 262104

ER -

Ultrafast release and capture of carriers in InGaAs/GaAs quantum dots observed by time-resolved terahertz spectroscopy

Abstract

Keywords

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