Abstract
Some key recent achievements in the development of novel saturable absorbers that are based on semiconductor quantum-dot (QD) structures for the passive mode locking of near-infrared lasers are outlined. These are group IV-VI semiconductor nanoparticles (quantum dots) in glass matrices and self-assembled semiconductor quantum dots (group III-V) grown on semiconductor mirrors (QD-SESAMs). The performance of solid-state (Yb3+, Nd3+ and Cr4+-based), Yb-doped fibre and monolithically integrated semiconductor lasers has been described within the context of ultrashort-pulse generation using these types of QD-based modulators. Particular attention has been paid to the nonlinear parameters of the QD-based saturable absorbers that determine the quality of the mode locking in such laser systems. (C) 2009 Elsevier Ltd. All rights reserved.
Original language | English |
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Pages (from-to) | 145 |
Number of pages | 45 |
Journal | Progress in Quantum Electronics |
Volume | 34 |
Issue number | 1 |
DOIs | |
Publication status | Published - Jan 2010 |
Keywords
- Mode locking
- Solid-state lasers
- Quantum-dots
- SOLID-STATE LASERS
- TI-SAPPHIRE LASER
- ULTRAFAST CARRIER DYNAMICS
- EMITTING SEMICONDUCTOR-LASERS
- NONLINEAR OPTICAL-PROPERTIES
- CR-FORSTERITE LASER
- BRAGG REFLECTOR
- DOPED GLASSES
- PHOSPHATE-GLASS
- REPETITION-RATE