Versatile mode-locked quantum-dot laser diodes

M. A.  Cataluna; E. U.  Rafailov

doi:10.1117/12.854639

Versatile mode-locked quantum-dot laser diodes

M. A. Cataluna, E. U. Rafailov

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Semiconductor quantum-dots have been recently showing great promise for the generation of ultrashort pulses, forming the basis of very compact and efficient ultrafast laser sources. In this paper we discuss how the unique properties of quantum-dot materials can be exploited in novel and versatile mode-locking regimes in InAs/GaAs quantum-dot edge-emitting lasers, both in monolithic and external cavity configurations. We present the current status of our research on ultrashort pulse generation involving ground (1260nm) and excited-state (1180nm) transitions, as well as the recent progress in external-cavity broadband tunable quantum-dot lasers.

Original language	English
Title of host publication	Semiconductor Lasers and Laser Dynamics IV
Editors	Krassimir Panajotov, Marc Sciamanna, Angel A. Valle, Rainer Michalzik
Place of Publication	Bellingham
Publisher	SPIE-International Society for Optical Engineering
Number of pages	8
ISBN (Print)	9780819481931
DOIs	https://doi.org/10.1117/12.854639
Publication status	Published - 2010
Event	SPIE Photonics Europe 2010: Semiconductor Lasers and Laser Dynamics VI - The Square Conference Centre, Brussels, Belgium Duration: 12 Apr 2010 → 16 Apr 2010 http://spie.org/x40293.xml

Publication series

Name	Proceedings of SPIE
Publisher	SPIE
Volume	7720

Conference

Conference	SPIE Photonics Europe 2010: Semiconductor Lasers and Laser Dynamics VI
Country/Territory	Belgium
City	Brussels
Period	12/04/10 → 16/04/10
Internet address	http://spie.org/x40293.xml

Keywords

Ultrafast lasers
quantum dots
mode locking
ground state
excited state
DYNAMICS
AMPLIFIERS
GAIN

Access to Document

10.1117/12.854639

Cite this

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title = "Versatile mode-locked quantum-dot laser diodes",

abstract = "Semiconductor quantum-dots have been recently showing great promise for the generation of ultrashort pulses, forming the basis of very compact and efficient ultrafast laser sources. In this paper we discuss how the unique properties of quantum-dot materials can be exploited in novel and versatile mode-locking regimes in InAs/GaAs quantum-dot edge-emitting lasers, both in monolithic and external cavity configurations. We present the current status of our research on ultrashort pulse generation involving ground (1260nm) and excited-state (1180nm) transitions, as well as the recent progress in external-cavity broadband tunable quantum-dot lasers.",

keywords = "Ultrafast lasers, quantum dots, mode locking, ground state, excited state, DYNAMICS, AMPLIFIERS, GAIN",

author = "Cataluna, {M. A.} and Rafailov, {E. U.}",

year = "2010",

doi = "10.1117/12.854639",

language = "English",

isbn = "9780819481931",

series = "Proceedings of SPIE",

publisher = "SPIE-International Society for Optical Engineering",

editor = "Krassimir Panajotov and Marc Sciamanna and Valle, {Angel A.} and Rainer Michalzik",

booktitle = "Semiconductor Lasers and Laser Dynamics IV",

note = "SPIE Photonics Europe 2010: Semiconductor Lasers and Laser Dynamics VI ; Conference date: 12-04-2010 Through 16-04-2010",

url = "http://spie.org/x40293.xml",

}

Cataluna, MA & Rafailov, EU 2010, Versatile mode-locked quantum-dot laser diodes. in K Panajotov, M Sciamanna, AA Valle & R Michalzik (eds), Semiconductor Lasers and Laser Dynamics IV., 77200W, Proceedings of SPIE, vol. 7720, SPIE-International Society for Optical Engineering, Bellingham, SPIE Photonics Europe 2010: Semiconductor Lasers and Laser Dynamics VI, Brussels, Belgium, 12/04/10. https://doi.org/10.1117/12.854639

Versatile mode-locked quantum-dot laser diodes. / Cataluna, M. A. ; Rafailov, E. U. .
Semiconductor Lasers and Laser Dynamics IV. ed. / Krassimir Panajotov; Marc Sciamanna; Angel A. Valle; Rainer Michalzik. Bellingham: SPIE-International Society for Optical Engineering, 2010. 77200W (Proceedings of SPIE; Vol. 7720).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Versatile mode-locked quantum-dot laser diodes

AU - Cataluna, M. A.

AU - Rafailov, E. U.

PY - 2010

Y1 - 2010

N2 - Semiconductor quantum-dots have been recently showing great promise for the generation of ultrashort pulses, forming the basis of very compact and efficient ultrafast laser sources. In this paper we discuss how the unique properties of quantum-dot materials can be exploited in novel and versatile mode-locking regimes in InAs/GaAs quantum-dot edge-emitting lasers, both in monolithic and external cavity configurations. We present the current status of our research on ultrashort pulse generation involving ground (1260nm) and excited-state (1180nm) transitions, as well as the recent progress in external-cavity broadband tunable quantum-dot lasers.

AB - Semiconductor quantum-dots have been recently showing great promise for the generation of ultrashort pulses, forming the basis of very compact and efficient ultrafast laser sources. In this paper we discuss how the unique properties of quantum-dot materials can be exploited in novel and versatile mode-locking regimes in InAs/GaAs quantum-dot edge-emitting lasers, both in monolithic and external cavity configurations. We present the current status of our research on ultrashort pulse generation involving ground (1260nm) and excited-state (1180nm) transitions, as well as the recent progress in external-cavity broadband tunable quantum-dot lasers.

KW - Ultrafast lasers

KW - quantum dots

KW - mode locking

KW - ground state

KW - excited state

KW - DYNAMICS

KW - AMPLIFIERS

KW - GAIN

U2 - 10.1117/12.854639

DO - 10.1117/12.854639

M3 - Conference contribution

SN - 9780819481931

T3 - Proceedings of SPIE

BT - Semiconductor Lasers and Laser Dynamics IV

A2 - Panajotov, Krassimir

A2 - Sciamanna, Marc

A2 - Valle, Angel A.

A2 - Michalzik, Rainer

PB - SPIE-International Society for Optical Engineering

CY - Bellingham

T2 - SPIE Photonics Europe 2010: Semiconductor Lasers and Laser Dynamics VI

Y2 - 12 April 2010 through 16 April 2010

ER -

Versatile mode-locked quantum-dot laser diodes

Abstract

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Conference

Keywords

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