Versatile mode-locked quantum-dot laser diodes

M. A. Cataluna, E. U. Rafailov

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    Semiconductor quantum-dots have been recently showing great promise for the generation of ultrashort pulses, forming the basis of very compact and efficient ultrafast laser sources. In this paper we discuss how the unique properties of quantum-dot materials can be exploited in novel and versatile mode-locking regimes in InAs/GaAs quantum-dot edge-emitting lasers, both in monolithic and external cavity configurations. We present the current status of our research on ultrashort pulse generation involving ground (1260nm) and excited-state (1180nm) transitions, as well as the recent progress in external-cavity broadband tunable quantum-dot lasers.

    Original languageEnglish
    Title of host publicationSemiconductor Lasers and Laser Dynamics IV
    EditorsKrassimir Panajotov, Marc Sciamanna, Angel A. Valle, Rainer Michalzik
    Place of PublicationBellingham
    PublisherSPIE-International Society for Optical Engineering
    Number of pages8
    ISBN (Print)9780819481931
    DOIs
    Publication statusPublished - 2010
    EventSPIE Photonics Europe 2010: Semiconductor Lasers and Laser Dynamics VI - The Square Conference Centre, Brussels, Belgium
    Duration: 12 Apr 201016 Apr 2010
    http://spie.org/x40293.xml

    Publication series

    NameProceedings of SPIE
    PublisherSPIE
    Volume7720

    Conference

    ConferenceSPIE Photonics Europe 2010: Semiconductor Lasers and Laser Dynamics VI
    CountryBelgium
    CityBrussels
    Period12/04/1016/04/10
    Internet address

    Keywords

    • Ultrafast lasers
    • quantum dots
    • mode locking
    • ground state
    • excited state
    • DYNAMICS
    • AMPLIFIERS
    • GAIN

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