Wetting-layer-pumped continuous-wave surface-emitting quantum-dot laser

Keith G. Wilcox; Hani J. Kbashi; Adrian H. Quarterman; Oliver J. Morris; Vasilis Apostolopoulos; Mohamed Henini; Anne C. Tropper

doi:10.1109/LPT.2011.2171944

Wetting-layer-pumped continuous-wave surface-emitting quantum-dot laser

Keith G. Wilcox, Hani J. Kbashi, Adrian H. Quarterman, Oliver J. Morris, Vasilis Apostolopoulos, Mohamed Henini, Anne C. Tropper

Physics

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Quantum-dot vertical-external-cavity surface-emitting lasers (QD VECSELs) are of interest due to their large inhomogeneous gain spectrum and the potential for temperature insensitivity and low threshold. We report a QD VECSEL which is wetting-layer-pumped using a 915-nm diode laser, reducing the quantum defect compared to barrier pumping. A slope efficiency of 56% relative to absorbed pump power was measured from an unprocessed sample with a heat-sink temperature of $-$30 $^{\circ} \hbox{C}$, 1.75$\, \times $ higher than when barrier pumped using an 830-nm pump diode.

Original language	English
Article number	6045318
Pages (from-to)	37-39
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	24
Issue number	1
DOIs	https://doi.org/10.1109/LPT.2011.2171944
Publication status	Published - 1 Jan 2012

Keywords

Optically pumped
Quantum dot (QD)
Semiconductor laser
Vertical-external-cavity surface-emitting laser (VECSEL)
Wetting layer

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/LPT.2011.2171944

Cite this

@article{8cc104a6725f4e89bdaec150706d1e03,

title = "Wetting-layer-pumped continuous-wave surface-emitting quantum-dot laser",

abstract = "Quantum-dot vertical-external-cavity surface-emitting lasers (QD VECSELs) are of interest due to their large inhomogeneous gain spectrum and the potential for temperature insensitivity and low threshold. We report a QD VECSEL which is wetting-layer-pumped using a 915-nm diode laser, reducing the quantum defect compared to barrier pumping. A slope efficiency of 56% relative to absorbed pump power was measured from an unprocessed sample with a heat-sink temperature of $-$30 $^{\circ} \hbox{C}$, 1.75$\, \times $ higher than when barrier pumped using an 830-nm pump diode.",

keywords = "Optically pumped, Quantum dot (QD), Semiconductor laser, Vertical-external-cavity surface-emitting laser (VECSEL), Wetting layer",

author = "Wilcox, {Keith G.} and Kbashi, {Hani J.} and Quarterman, {Adrian H.} and Morris, {Oliver J.} and Vasilis Apostolopoulos and Mohamed Henini and Tropper, {Anne C.}",

year = "2012",

month = jan,

day = "1",

doi = "10.1109/LPT.2011.2171944",

language = "English",

volume = "24",

pages = "37--39",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers",

number = "1",

}

TY - JOUR

T1 - Wetting-layer-pumped continuous-wave surface-emitting quantum-dot laser

AU - Wilcox, Keith G.

AU - Kbashi, Hani J.

AU - Quarterman, Adrian H.

AU - Morris, Oliver J.

AU - Apostolopoulos, Vasilis

AU - Henini, Mohamed

AU - Tropper, Anne C.

PY - 2012/1/1

Y1 - 2012/1/1

N2 - Quantum-dot vertical-external-cavity surface-emitting lasers (QD VECSELs) are of interest due to their large inhomogeneous gain spectrum and the potential for temperature insensitivity and low threshold. We report a QD VECSEL which is wetting-layer-pumped using a 915-nm diode laser, reducing the quantum defect compared to barrier pumping. A slope efficiency of 56% relative to absorbed pump power was measured from an unprocessed sample with a heat-sink temperature of $-$30 $^{\circ} \hbox{C}$, 1.75$\, \times $ higher than when barrier pumped using an 830-nm pump diode.

AB - Quantum-dot vertical-external-cavity surface-emitting lasers (QD VECSELs) are of interest due to their large inhomogeneous gain spectrum and the potential for temperature insensitivity and low threshold. We report a QD VECSEL which is wetting-layer-pumped using a 915-nm diode laser, reducing the quantum defect compared to barrier pumping. A slope efficiency of 56% relative to absorbed pump power was measured from an unprocessed sample with a heat-sink temperature of $-$30 $^{\circ} \hbox{C}$, 1.75$\, \times $ higher than when barrier pumped using an 830-nm pump diode.

KW - Optically pumped

KW - Quantum dot (QD)

KW - Semiconductor laser

KW - Vertical-external-cavity surface-emitting laser (VECSEL)

KW - Wetting layer

UR - http://www.scopus.com/inward/record.url?scp=83455163180&partnerID=8YFLogxK

U2 - 10.1109/LPT.2011.2171944

DO - 10.1109/LPT.2011.2171944

M3 - Article

AN - SCOPUS:83455163180

SN - 1041-1135

VL - 24

SP - 37

EP - 39

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 1

M1 - 6045318

ER -

Wetting-layer-pumped continuous-wave surface-emitting quantum-dot laser

Abstract

Keywords

ASJC Scopus subject areas

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