Abstract
Quantum-dot vertical-external-cavity surface-emitting lasers (QD VECSELs) are of interest due to their large inhomogeneous gain spectrum and the potential for temperature insensitivity and low threshold. We report a QD VECSEL which is wetting-layer-pumped using a 915-nm diode laser, reducing the quantum defect compared to barrier pumping. A slope efficiency of 56% relative to absorbed pump power was measured from an unprocessed sample with a heat-sink temperature of $-$30 $^{\circ} \hbox{C}$, 1.75$\, \times $ higher than when barrier pumped using an 830-nm pump diode.
Original language | English |
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Article number | 6045318 |
Pages (from-to) | 37-39 |
Number of pages | 3 |
Journal | IEEE Photonics Technology Letters |
Volume | 24 |
Issue number | 1 |
DOIs | |
Publication status | Published - 1 Jan 2012 |
Keywords
- Optically pumped
- Quantum dot (QD)
- Semiconductor laser
- Vertical-external-cavity surface-emitting laser (VECSEL)
- Wetting layer
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering