Wetting-layer-pumped continuous-wave surface-emitting quantum-dot laser

Keith G. Wilcox, Hani J. Kbashi, Adrian H. Quarterman, Oliver J. Morris, Vasilis Apostolopoulos, Mohamed Henini, Anne C. Tropper

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Abstract

Quantum-dot vertical-external-cavity surface-emitting lasers (QD VECSELs) are of interest due to their large inhomogeneous gain spectrum and the potential for temperature insensitivity and low threshold. We report a QD VECSEL which is wetting-layer-pumped using a 915-nm diode laser, reducing the quantum defect compared to barrier pumping. A slope efficiency of 56% relative to absorbed pump power was measured from an unprocessed sample with a heat-sink temperature of $-$30 $^{\circ} \hbox{C}$, 1.75$\, \times $ higher than when barrier pumped using an 830-nm pump diode.

Original languageEnglish
Article number6045318
Pages (from-to)37-39
Number of pages3
JournalIEEE Photonics Technology Letters
Volume24
Issue number1
DOIs
Publication statusPublished - 1 Jan 2012

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Keywords

  • Optically pumped
  • Quantum dot (QD)
  • Semiconductor laser
  • Vertical-external-cavity surface-emitting laser (VECSEL)
  • Wetting layer

Cite this

Wilcox, K. G., Kbashi, H. J., Quarterman, A. H., Morris, O. J., Apostolopoulos, V., Henini, M., & Tropper, A. C. (2012). Wetting-layer-pumped continuous-wave surface-emitting quantum-dot laser. IEEE Photonics Technology Letters, 24(1), 37-39. [6045318]. https://doi.org/10.1109/LPT.2011.2171944