Wetting-layer-pumped continuous-wave surface-emitting quantum-dot laser

TY - JOUR

T1 - Wetting-layer-pumped continuous-wave surface-emitting quantum-dot laser

AU - Wilcox, Keith G.

AU - Kbashi, Hani J.

AU - Quarterman, Adrian H.

AU - Morris, Oliver J.

AU - Apostolopoulos, Vasilis

AU - Henini, Mohamed

AU - Tropper, Anne C.

PY - 2012/1/1

Y1 - 2012/1/1

N2 - Quantum-dot vertical-external-cavity surface-emitting lasers (QD VECSELs) are of interest due to their large inhomogeneous gain spectrum and the potential for temperature insensitivity and low threshold. We report a QD VECSEL which is wetting-layer-pumped using a 915-nm diode laser, reducing the quantum defect compared to barrier pumping. A slope efficiency of 56% relative to absorbed pump power was measured from an unprocessed sample with a heat-sink temperature of $-$30 $^{\circ} \hbox{C}$, 1.75$\, \times $ higher than when barrier pumped using an 830-nm pump diode.

AB - Quantum-dot vertical-external-cavity surface-emitting lasers (QD VECSELs) are of interest due to their large inhomogeneous gain spectrum and the potential for temperature insensitivity and low threshold. We report a QD VECSEL which is wetting-layer-pumped using a 915-nm diode laser, reducing the quantum defect compared to barrier pumping. A slope efficiency of 56% relative to absorbed pump power was measured from an unprocessed sample with a heat-sink temperature of $-$30 $^{\circ} \hbox{C}$, 1.75$\, \times $ higher than when barrier pumped using an 830-nm pump diode.

KW - Optically pumped

KW - Quantum dot (QD)

KW - Semiconductor laser

KW - Vertical-external-cavity surface-emitting laser (VECSEL)

KW - Wetting layer

UR - https://www.scopus.com/pages/publications/83455163180

U2 - 10.1109/LPT.2011.2171944

DO - 10.1109/LPT.2011.2171944

M3 - Article

AN - SCOPUS:83455163180

SN - 1041-1135

VL - 24

SP - 37

EP - 39

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 1

M1 - 6045318

ER -